Analytical description of spectral hole-burning effects in active semiconductors.
نویسنده
چکیده
An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.
منابع مشابه
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ورودعنوان ژورنال:
- Optics letters
دوره 27 21 شماره
صفحات -
تاریخ انتشار 2002