Analytical description of spectral hole-burning effects in active semiconductors.

نویسنده

  • Salvador Balle
چکیده

An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spectroscopy , persistent hole burning , and holographic applications of naphtophthalocyanine / haloanthracene systems

We report on the spectroscopic and hole burning properties of free-base naphtophthalocyanine with and without 1chloranthracene in polymer host. These materials exhibit a strong 0–0 absorption band in the region 800 nm matching the wavelength range of most semiconductor and Ti:Sapphire lasers. The materials studied feature two persistent hole burning photochemical mechanisms, i.e. one-photon pro...

متن کامل

Spectral hole burning in naphthalocyanines derivatives in the region 800 nm for holographic storage applications

Persistent spectral hole burning is studied for several free-based and metallo-naphthalocyanine derivatives in polymer hosts. These materials exhibit a strong 0}0 absorption band in the region 800 nm matching the wavelength range of most semiconductor diode lasers and Ti : Sapphire lasers. Metallo-naphthalocyanines demonstrate a nonphotochemical hole-burning mechanism that is likely related to ...

متن کامل

Numerical modeling of optical coherent transient processes with complex configurations—III: Noisy laser source

A previously developed numerical model based on Maxwell–Bloch equations was modified to simulate optical coherent transient and spectral hole burning processes with noisy laser sources. Random walk phase noise was simulated using laser-phase sequences generated numerically according to the normal distribution of the phase shift. The noise model was tested by comparing the simulated spectral hol...

متن کامل

Theory of Nondegenerate Four-Wave Mixing Between Pulses in a Semiconductor Waveguide

We develop a perturbation theory for calculating the effects of saturation on nondegenerate four-wave mixing between short optical pulses in a semiconductor optical amplifier. Saturation due to ultrafast intraband dynamics like carrier heating and spectral hole burning is found to be important for pulses on the order of 10–20 ps or less.

متن کامل

Enhanced nondegenerate four-wave mixing owing to electromagnetically induced transparency in a spectral hole-burning crystal.

We have demonstrated electromagnetically induced transparency (EIT) in an inhomogeneously broadened spectral hole-burning system of Pr(3+)-doped Y(2)SiO(5) at 6 K. We have also shown enhancement of four-wave mixing under conditions of reduced absorption. This demonstration opens the possibilities of pursuing EIT applications such as high-resolution optical image processing and optical data stor...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics letters

دوره 27 21  شماره 

صفحات  -

تاریخ انتشار 2002